Technology
From materials to antennas, we deliver the future in one seamless flow.
UltrabandTech possesses comprehensive R&D capabilities, covering semiconductor device development, IC design, packaging, power management, and antenna module system integration, delivering one-stop solutions.
Material
IC design
Packaging
Power
Antenna
in module
Device with high linearcharacteristic
MMIC (PA, LNA, Switch and FEM)
3D MMIC package
Antenna Module Designs(5G FR2 and Satcom)
High voltage (>1200V) and high switching frequency power GaN on SiC devices
Material
RFcharacteristics achieve
high linear and output power
Power device
higher breakdown voltages such as 1200V for AI servers or 1700V for EV chargers
Epitaxy
power amplifier
IC design
MMIC
(PA, LNA, Switch and FEM)
Power components
Packaging
Passive part (IPD)
Active part
(III-V compound)
cavity sandwich
Active part
(III-V compound)
Passive part
(IPD)
Power
Device: GaN on SiC
BV: lager than 1200V
Ron: 30 mΩ to 150 mΩ
High voltage (>1200V) and high switching frequency GaN-on-SiC power devices
Antenna
in module
Antenna module design
(Applied to 5G FR2 and satellite communications)
Can be expanded into antennas of different sizes
Meet the needs of different applications