Ultraband Technologies
超赫科技
Taipei Aerospace & Defense Technology Exhibition
2025/09/18-20
Taipei Nangang Exhibition Center Hall 1,K0328
Ultrabandtech presents its latest LEO phased array antenna module Azhdarchidae, alongside the AZQ Ku-band array module co-developed with BWant, featuring live robotic-arm integration to demonstrate precise satellite tracking. Visitors can also explore our newest cutting-edge chips. We welcome you to connect with us and look forward to meeting you at the exhibition!
Innovating Beyond Limits in Wireless
As a pioneer in wireless communication technologies, Ultrabandtech specializes in the design and optimization of high-performance power amplifier semiconductor devices. By leveraging advanced III-V compound semiconductor technologies—including GaN HEMTs (Gallium Nitride High Electron Mobility Transistors) and GaAs pHEMTs (Gallium Arsenide Pseudomorphic HEMTs)—we deliver breakthrough solutions that overcome critical industry challenges. Our innovations enable higher efficiency, greater linearity, and superior reliability, empowering the next generation of wireless communication systems.
Microwave to millimeter wave RF products, including PA, LNA, switch, and antenna front-end modules, utilize advanced GaN-on-SiC, GaAs pHEMT, and InP HEMT processes, offering high linearity, low noise, and strong power handling capabilities. They fully support 5G mmWave (n257, n258, n261) and are widely used in small base stations, radar, satellite communications, and the Internet of Things.
Utilizing advanced GaN-on-SiC technology and diverse structures, it covers a high voltage range from 650V to 1200V, offering high efficiency, low loss, and long-term stability. Strict quality control ensures consistent reliability in harsh environments and is widely used in high-performance fields such as power systems, renewable energy, electric vehicles, and aerospace defense.
This Product Portfolio spans critical mmWave components—including mmWave switches, low-noise amplifiers (LNAs), and power amplifiers (PAs) operating in the Ku and Ka bands—optimized using III–V semiconductor technologies. Our solution best fits for Satellite Ground Terminal applications and other Ku & Ka band application.
The SYSTEM & MODULE team develops next-generation SATCOM and phased array modules. Key products include the Azhdarchidae Ku-band phased array terminal for LEO with electronic beam steering, the modular Quetzalcoatlus system scalable from home receivers to ground stations, and the AzhdaeQ UAV module enabling BVLOS flights. With strong performance and adaptability, we advance satellite internet, airborne and maritime communications, and future mesh networks.
Core Technology
Leading 5G millimeter wave technology
We specialize in 5G MMICs, including GaN ICs at 28GHz and 39GHz. Our high-performance switches, LNAs, PAs, AiP modules, beamforming arrays, upconverters, and control modules power small base stations and smart antenna systems, enabling next-generation 5G networks with high speed, low latency, and exceptional reliability
Innovative GaN Power Devices
We develop high-breakdown voltage GaN power devices in both D-mode and E-mode, delivering high efficiency, low losses, and excellent thermal performance. Ideal for AC/DC and DC/DC converters, charging stations, on-board chargers, fast-charging devices, and server power systems, our solutions excel in energy conversion and high-power applications.
End-to-End Integration
We not only master the key technologies of epitaxial structure design and device layout optimization, but also meet the needs of the rapidly growing global market with strict quality control and rapid mass production capabilities. Ultraband Technologies takes high efficiency and high linearity as its core brand, continuously promoting the innovation of RF and power technology, and empowering the infinite possibilities of the intelligent world.
Innovation Powers Technology
Ultraband Technologies is a III-V compound semiconductor fabless IC design house based in Taiwan. We are focused on designing 5G wireless Monolithic Microwave Integrated Circuits (MMIC), RF Frontend Modules, Low Earth Orbit (LEO) ICs, and III-V Power Devices. We are also dedicated to optimizing Epitaxial Structures and Device Layouts.
Company Information
-
Founded: March 2020
-
Paid-in Capital: NT$500 million
-
Chairperson: Ms. Yen-Chin Lin
-
President & CEO: Mr. Chan-Hsing Wu
-
Headquarters: 7F-3, No. 65, Gaotie 7th Rd., Zhubei City, Hsinchu County 302058, Taiwan