Power
Utilizing advanced GaN-on-SiC technology and precision manufacturing processes, combined with various structures such as D-mode and Cascode, the Power series covers a high-voltage range of 650V to 1200V, fully meeting the high-voltage, high-frequency, and high-power density requirements of power electronics. Leveraging the high electron mobility and excellent thermal conductivity of gallium nitride materials, the Power series achieves extremely high efficiency, low switching losses, and long-term reliability even in ultra-high voltage environments. Rigorous quality control ensures that each product delivers consistent, reliable, and efficient performance under demanding application conditions, making it widely applicable to the next generation of high-performance power systems, industrial control, renewable energy, electric vehicles, and aerospace and defense.

D-GaN HEMTs
High-breakdown voltage, low-Ron power HEMT devices, specifically designed for high-voltage applications, are also available in bare die form to support standard die-attach processes.
Specification | UPDC4G48A8 | UPDC5G78B1 |
|---|---|---|
VBD | 650 V | 1200 V |
RON | 80 mohm | 120 mohm |
Ciss | 243 pF | 248 pF |
Coss | 26 pF | 17 pF |
VGS(th) | -16 V | -14 V |
ID(MAX) | 20 A | 20 A |
ID(MAX) | 20 A | 20 A |
Package | Bare Die | Bare Die |
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