COMPANY PROFILE
Company Name
Ultraband Technologies Inc.
超赫科技股份有限公司
Founded in
Jan. 2nd, 2020
Capital
3.33 M USD
Chairman
Tony Lin
President
Chan-Shin Wu, Ph.D.
Headquarter
3F-7, No. 36 De-Xing W. Rd., Shilin District,
Taipei Taiwan
11158 台北市士林區德行西路36 號3 樓-7
Core Competence
III-V compound semiconductor epitaxial
structure design,device design,
Microwave & Millimeter-wave chip & module design
and WLCSP design.
Technologies
GaN on SiC epitaxial layer design of super linear and high power pHEMT devices for 5G sub-6GHz and millimeter-wave PA applications
GaN on SiC epitaxial layer design of super high voltage and high power HEMT devices for high power and high switching applications
InP epitaxial layer of super linear and high power HBT devices for millimeter-wave applications.
GaAs & InP epitaxial layer design of super linear and high power pHEMT devices for millimeter-wave applications
Millimeter-wave chip design for 5G+ and Satellite communication applications.
WLCSP design for high frequency and/or high power chip packaging.
PRODUCTS
New | URS6C58 | 28GHz GaN HEMT Switch |
URF6C55 | 28GHz GaAs pHEMT LNA+Switch | |
URL6C48 | 28GHz GaN HEMT LNA |
CONTACT US
7F-3, No.65, Gaotie 7th Rd., Zhubei City, Hsinchu County, Taiwan 302058
302058 新竹縣竹北市高鐵七路65號7樓之3
TEL +886 3 5506939
Mobile +886 922 787 886
Email sales@ultrabandtech.com
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COMPANY PROFILE
Company Name :
Ultraband Technologies Inc.
超赫科技股份有限公司
Founded in :
2nd. Jan, 2020
Capital :
3.33 MUSD
Chairman :
Tony Lin
President :
Chan-Shin Wu, Ph.D.
Headquarter :
3F-7, No. 36 De-Xing W. Rd., Shilin District,
Taipei Taiwan 11158
11158 台北市士林區德行西路36 號3 樓-7
Core Competence :
II-VI & III-V compound semiconductor epitaxial structure design, pHEMT & HBT device design, Microwave & Millimeter-wave chip & module design and WLCSP design.
Technologies
GaAs & InP epitaxial layer design of super linear and high power pHEMT devices for millimeter-wave applications
InP epitaxial layer design of super linear and high power HBT devices for millimeter-wave applications.
GaN on SiC epitaxial layer design of super high voltage and high power HEMT devices for high power switching applications
GaN on SiC epitaxial layer design of super linear and high power pHEMT devices for 5G sub-6GHz and millimeter-wave PA applications
Millimeter-wave chip design for 5G and Satellite communication applications.
WLCSP design for high frequency chip packaging.
PRODUCTS
II-VI & III-V compound semiconductor epitaxial structure design
pHEMT & HBT device design
Microwave & Millimeter-wave chip & module design and WLCSP design
DOWNLOAD
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CONTACT US
7F-3, No.65, Gaotie 7th Rd., Zhubei City, Hsinchu County, Taiwan 302058
302058 新竹縣竹北市高鐵七路65號7樓之3
TEL +886 3 5506939
Mobile +886 922 787 886
Email sales@ultrabandtech.com