超赫科技股份有限公司

COMPANY PROFILE

Company Name

Ultraband Technologies Inc.
超赫科技股份有限公司

Founded in

Jan. 2nd, 2020

Capital

3.33 M USD

Chairman

Tony Lin

President

Chan-Shin Wu, Ph.D.

Headquarter

3F-7, No. 36 De-Xing W. Rd., Shilin District, Taipei Taiwan
11158 台北市士林區德行西路36 號3 樓-7

Core Competence

III-V compound semiconductor epitaxial structure design,device design,
Microwave & Millimeter-wave chip & module design and WLCSP design.

Technologies

GaN on SiC epitaxial layer design of super linear and high power pHEMT devices for 5G sub-6GHz and millimeter-wave PA applications

GaN on SiC epitaxial layer design of super high voltage and high power HEMT devices for high power and high switching applications

InP epitaxial layer of super linear and high power HBT devices for millimeter-wave applications.

GaAs & InP epitaxial layer design of super linear and high power pHEMT devices for millimeter-wave applications

Millimeter-wave chip design for 5G+ and Satellite communication applications.

WLCSP design for high frequency and/or high power chip packaging.

PRODUCTS

PA for 28GHz
Switch for 28GHz
LAN for 28GHz

PA for 39GHz
Switch for 39GHz
LNA for 39GHz

Power transistor with GaN on SiC chips for converter and inverter application

III-V compound semiconductor epitaxial structure design

pHEMT & HBT device design

Microwave & Millimeter-wave chip & module design and WLCSP design

DOWNLOAD

Please fill out the contact form and let us know what you want to ask

CONTACT US

3F-7, No.36, Dexing W. Road,
Shilin District,
Taipei, Taiwan 11158

11158 台北市士林區德行西路36 號3樓-7
TEL +886 3 5506939
Mobile +886 922 787 886

Email sales@ultrabandtech.com

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COMPANY PROFILE

Company Name :

Ultraband Technologies Inc.
超赫科技股份有限公司

Founded in :

2nd. Jan, 2020

Capital :

3.33 MUSD

Chairman :

Tony Lin

President :

Chan-Shin Wu, Ph.D.

Headquarter :

3F-7, No. 36 De-Xing W. Rd., Shilin District, Taipei Taiwan 11158
11158 台北市士林區德行西路36 號3 樓-7

Core Competence :

II-VI & III-V compound semiconductor epitaxial structure design, pHEMT & HBT device design, Microwave & Millimeter-wave chip & module design and WLCSP design.

Technologies

GaAs & InP epitaxial layer design of super linear and high power pHEMT devices for millimeter-wave applications

InP epitaxial layer design of super linear and high power HBT devices for millimeter-wave applications.

GaN on SiC epitaxial layer design of super high voltage and high power HEMT devices for high power switching applications

GaN on SiC epitaxial layer design of super linear and high power pHEMT devices for 5G sub-6GHz and millimeter-wave PA applications

Millimeter-wave chip design for 5G and Satellite communication applications.

WLCSP design for high frequency chip packaging.

PRODUCTS

II-VI & III-V compound semiconductor epitaxial structure design

pHEMT & HBT device design

Microwave & Millimeter-wave chip & module design and WLCSP design

DOWNLOAD

Please fill out the contact form and let us know what you want to ask

CONTACT US

3F-7, No.36, Dexing W. Road,
Shilin District, Taipei,
Taiwan 11158

11158 台北市士林區德行西路36號3樓-7
TEL +886 3 5797727
Mobile +886 922 787 886

Email sales@ultrabandtech.com