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Power Discrete
& GaN devices.
電源半導體產品組合
結合耗盡型氮化鎵（D-mode GaN）與低壓 MOS 技術的高壓增強型解決方案，專為精巧、高效能的快充與電源模組設計
電源元件產品組合
卓越高壓效能
具備規模化擴充能力
結合耗盡型氮化鎵（D-mode GaN）與低壓 MOS 技術的高壓增強型解決方案，專為精巧、高效能的快充與電源模組設計。
650–1200 V
Voltage classes
40–150 mΩ
Target RDS(on)
GaN-on-Si / SiC
Device platforms
QFN / TOLL
Package roadmap
Part number | Platform | Voltage / RDS(on) | Integration | Package |
|---|---|---|---|---|
UPDCC065A040P | GaN on SiC | 650 V / 40 mΩ | Cascode with LVMOS | TOLL-4L |
UPDCE065A040P | GaN on SiC | 650 V / 40 mΩ | Embedded driver | TOLL-9L |
UPDYE065A150I | GaN on Si | 650 V / 150 mΩ | Embedded driver | QFN 8 × 8 mm |
UPDYC065A150I | GaN on Si | 650 V / 150 mΩ | Cascode with LVMOS | QFN 8 × 8 mm |
UPDCC065A150I | GaN on SiC | 650 V / 150 mΩ | Cascode with LVMOS | QFN 8 × 8 mm |
UPDCC120A080P | GaN on SiC | 1200 V80 mΩ | Cascode with LVMOS | TOLL-4L |
快充與模組技術藍圖
從元件開發到模組驗證的
完整佈局
2026 Q4
Now
Now
Now
2026 Q3
65 W
Flyback
Application
Ready
100 W
AHB
Application
Ready
240 W
AHB
Application
Ready
>500 W
Planning
140 W
Development
with NTT-AT
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