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Power Discrete

& GaN devices.

POWER SEMICONDUCTOR PORTFOLIO

GaN_on_SiC_Gold_Hero_4K.png

High-voltage enhancement solutions combining D-mode GaN with low-voltage MOS technology for compact, efficient fast chargers and power modules

POWER DEVICE PORTFOLIO

High-voltage performance, ready to scale.

High-voltage enhancement solutions combining D-mode GaN with low-voltage MOS technology for compact, efficient fast chargers and power modules

650–1200 V

Voltage classes

40–150 mΩ

Target RDS(on)

GaN-on-Si / SiC

Device platforms

QFN / TOLL

Package roadmap

Part number
Platform
Voltage / RDS(on)
Integration
Package
UPDCC065A040P
GaN on SiC
650 V / 40 mΩ
Cascode with LVMOS
TOLL-4L
UPDCE065A040P
GaN on SiC
650 V / 40 mΩ
Embedded driver
TOLL-9L
UPDYE065A150I
GaN on Si
650 V / 150 mΩ
Embedded driver
QFN 8 × 8 mm
UPDYC065A150I
GaN on Si
650 V / 150 mΩ
Cascode with LVMOS
QFN 8 × 8 mm
UPDCC065A150I
GaN on SiC
650 V / 150 mΩ
Cascode with LVMOS
QFN 8 × 8 mm
UPDCC120A080P
GaN on SiC
1200 V80 mΩ
Cascode with LVMOS
TOLL-4L

FAST CHARGER / MODULE ROADMAP

From device development to module verification.

2026 Q4

Now

Now

Now

2026 Q3

65 W

Flyback

Application

Ready

100 W

AHB

Application

Ready

240 W

​AHB

Application

Ready

>500 W

Planning

140 W

Development

with NTT-AT​

POWER DEVICE INQUIRY

Build the next power platform with us.

Tell us your target voltage, current, switching frequency, package, topology or thermal requirements.

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